DIODE SIL CARBIDE 650V 14A 4DFN
反向耐压650 V
平均整流电流14 A
正向压降1.55 V
类型肖特基
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反向耐压650 V
平均整流电流14 A
正向压降1.55 V最大 · 4 A
类型肖特基
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 14A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 4 A |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Cut Tape (CT); Tape & Box (TB) |
| Package / Case | 4-PowerTSFN |
| Supplier Device Package | 4-DFN (8x8) |
| 其他 | |
| Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
| Diode Type | Silicon Carbide Schottky |
| Mfr | Global Power Technology-GPT |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |