沟道N 沟道
耐压100 V
连续漏极电流65 A
导通电阻7.5 mΩ
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压100 V
连续漏极电流65 A
导通电阻7.5 mΩ最大 · 50A
阈值电压2.5 V最大 · 250μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 79W (Tc) |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2428 pF @ 50 V |
| Mfr | Goford Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 50A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
器件图片
技术资料
该型号暂未收录资料。