HGTP20N60C3R

在产晶体管 - IGBT - 单

40A, 600V, RUGGED N-CHANNEL IGBT

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技术参数

电源
Current - Collector (Ic) (Max)45 A
Current - Collector Pulsed (Icm)300 A
Power - Max164 W
Voltage - Collector Emitter Breakdown (Max)600 V
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220
其他
Gate Charge122 nC
IGBT Type-
Input TypeStandard
MfrHarris Corporation
Product StatusActive
Reverse Recovery Time (trr)24 ns
Series-
Switching Energy500µJ (on), 500µJ (off)
Td (on/off) @ 25°C28ns/151ns
Test Condition480V, 20A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 20A

技术资料