HSCH-9161

RF 二极管

IC DETECTOR DIODE GAAS 110GHZ BEAM LEAD

全部替代型号

查看完整报告

技术参数

电源
Burnout power20 dBm (Typ.)
Voltage sensitivity strength0.5 mV/μW (Min.)
环境与封装
Operating temperature range-65 °C (Min.)
其他
Beam lead strength3 Grams (Max.)
Junction capacitance0.035 pF (Typ.)
Video resistance2.5 kΩ (Min.)

技术资料