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技术参数

电源
Drain CurrentContinuous (T_C= 25°C, V_GS = 10V) (Figure 2) I_D33 A
Drain to Source Voltage (Note 1) V_DSS100 V
Gate to Source Threshold Voltage V_GS(TH)2 V (Min)
Power Dissipation P_D120 W
环境与封装
Operating and Storage Temperature T_J, T_STG-55 to 175 °C
PACKAGETO-220AB
其他
Drain to Source On Resistance r_DS(ON)0.040 Ω (Max)

技术资料