Transistors - Bipolar (BJT) - Si
类型NPN
集射极耐压30 V
集电极电流300 mA
放大倍数 hFE20000
全部替代型号
查看完整报告技术参数
类型NPN
集射极耐压30 V
集电极电流300 mA最大
放大倍数 hFE20000150mA
功率225 mW最大
| 电源 | |
|---|---|
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Current - Collector (Ic) (Max) | 300 mA |
| Power - Max | 225 mW |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| 交流 / 直流特性 | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 150mA, 1V |
| Frequency - Transition | 125MHz |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| 其他 | |
| Mfr | Yangjie Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |