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技术参数

电源
Current - Average Rectified (Io) (per Diode)150A
Current - Reverse Leakage @ Vr25 µA @ 50 V
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 100 A
环境与封装
Mounting TypeChassis Mount
Operating Temperature - Junction-55°C~150°C
PackageBulk
Package / CaseTwin Tower
Supplier Device PackageTwin Tower
其他
Diode Configuration1 Pair Common Anode
Diode TypeStandard
MfrGeneSiC Semiconductor
Product StatusObsolete
Reverse Recovery Time (trr)90 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)

技术资料