P1000S-CT

DIODE GEN PURP 1.2KV 10A P600

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反向耐压1.2 kV
平均整流电流10 A
正向压降1.05 V
类型标准

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技术参数

反向耐压1.2 kV
平均整流电流10 A
正向压降1.05 V最大 · 10 A
类型标准Standard Recovery >500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr10 µA @ 1.2 V
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.05 V @ 10 A
环境与封装
Mounting TypeThrough Hole
Operating Temperature - Junction-50°C~175°C
PackageStrip
Package / CaseP600, Axial
Supplier Device PackageP600
其他
Base Product NumberP1000S
Capacitance @ Vr, F-
Diode TypeStandard
MfrDiotec Semiconductor
Product StatusActive
Reverse Recovery Time (trr)1.5 µs
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)

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技术资料

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