MOSFET N-CH 30V 79A LFPAK56
沟道N 沟道
耐压30 V
连续漏极电流79 A
导通电阻6 mΩ
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沟道N 沟道
耐压30 V
连续漏极电流79 A
导通电阻6 mΩ最大 · 15A
阈值电压2.15 V最大 · 1mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 79A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | - |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Package | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Supplier Device Package | LFPAK56, Power-SO8 |
| 其他 | |
| Base Product Number | PH6030 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1425 pF @ 12 V |
| Mfr | Nexperia USA Inc. |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 15A, 10V |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
技术资料
该型号暂未收录资料。