RFL1N15L

RFL1N15L

单 FET,MOSFETTO-205AF

N-CHANNEL POWER MOSFET

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沟道N 沟道
耐压150 V
连续漏极电流1 A
导通电阻1.9 Ω

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技术参数

沟道N 沟道
耐压150 V
连续漏极电流1 A
导通电阻1.9 Ω最大 · 1A
阈值电压2 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)5V
Power Dissipation (Max)8.33W (Tc)
环境与封装
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Package / CaseTO-205AF Metal Can
Supplier Device PackageTO-205AF (TO-39)
其他
FET Feature-
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
MfrHarris Corporation
PackagingBulk
Part StatusActive
Rds On (Max) @ Id, Vgs1.9Ohm @ 1A, 5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 250µA

器件图片

技术资料