DIODE GEN PURP 800V 10A DO214AB
反向耐压800 V
平均整流电流10 A
类型标准
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技术参数
反向耐压800 V
平均整流电流10 A
类型标准Standard Recovery >500ns，> 200mA (Io)
| 电源 | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| 环境与封装 | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-214AB, SMC |
| Supplier Device Package | DO-214AB (SMC) |
| 其他 | |
| Base Product Number | S10K |
| Capacitance @ Vr, F | 60pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
器件图片
技术资料
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