SE20DTJ-M3/I

SE20DTJ-M3/I

单二极管TO-263-3

DIODE GEN PURP 600V 3.8A SMPD

反向耐压600 V
平均整流电流3.8 A
正向压降1.2 V
类型标准

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技术参数

反向耐压600 V
平均整流电流3.8 A
正向压降1.2 V最大 · 20 A
类型标准Standard Recovery >500ns,> 200mA (Io)
电源
Current - Average Rectified (Io)3.8A
Current - Reverse Leakage @ Vr25 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 20 A
环境与封装
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction-55°C ~ 175°C
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), Variant
QualificationAEC-Q101
Supplier Device PackageSMPD
其他
Capacitance @ Vr, F150pF @ 4V, 1MHz
MfrVishay General Semiconductor - Diodes Division
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusActive
Reverse Recovery Time (trr)3 µs
Series-
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard

器件图片

技术资料