SI2306-TP

SI2306-TP

在产晶体管 - FET,MOSFET - 单SOT-23

MOSFET N-CH 30V 3.16A SOT23

沟道N 沟道
耐压30 V
连续漏极电流3.16 A
导通电阻65 mΩ

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技术参数

沟道N 沟道
耐压30 V
连续漏极电流3.16 A
导通电阻65 mΩ最大 · 2.5A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C3.16A (Ta)
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)750mW
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23
其他
Base Product NumberSI2306
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds305 pF @ 15 V
MfrMicro Commercial Co
Product StatusActive
Rds On (Max) @ Id, Vgs65mOhm @ 2.5A, 4.5V
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

器件图片

技术资料