SI7309DN-T1-GE3

单 FET,MOSFET

MOSFET P-CH 60V 8A PPAK1212-8

问 AI FAE
沟道P 沟道
耐压60 V
连续漏极电流8 A
导通电阻115 mΩ

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技术参数

沟道P 沟道
耐压60 V
连续漏极电流8 A
导通电阻115 mΩ最大 · 3.9A
阈值电压3 V最大 · 250μA
电源
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)3.2W (Ta), 19.8W (Tc)
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / CasePowerPAK® 1212-8
Supplier Device PackagePowerPAK® 1212-8
其他
Base Product NumberSI7309
FET Feature-
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 30 V
MfrVishay Siliconix
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusActive
Rds On (Max) @ Id, Vgs115mOhm @ 3.9A, 10V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

技术资料

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