SIZ320DT-T1-GE3

SIZ320DT-T1-GE3

FET,MOSFET 阵列

MOSFET 2N-CH 25V 30A/40A 8PWR33

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C30A (Tc), 40A (Tc)
Drain to Source Voltage (Vdss)25V
Power - Max16.7W, 31W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case8-PowerWDFN
Supplier Device Package8-Power33 (3x3)
其他
Base Product NumberSIZ320
Configuration2 N-Channel (Dual)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs8.9nC @ 4.5V, 11.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 12.5V, 1370pF @ 12.5V
ManufacturerVishay Siliconix
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusLast Time Buy
Rds On (Max) @ Id, Vgs8.3mOhm @ 8A, 10V, 4.24mOhm @ 10A, 10V
SeriesPowerPAIR®, TrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 250µA

器件图片

技术资料

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