SIZ920DT-T1-GE3

SIZ920DT-T1-GE3

FET,MOSFET 阵列

MOSFET 2N-CH 30V 40A 8POWERPAIR

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C40A
Drain to Source Voltage (Vdss)30V
Power - Max39W, 100W
环境与封装
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case8-PowerWDFN
Supplier Device Package8-PowerPair® (6x5)
其他
Base Product NumberSIZ920
Configuration2 N-Channel (Half Bridge)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1260pF @ 15V
ManufacturerVishay Siliconix
PackagingTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part StatusObsolete
Rds On (Max) @ Id, Vgs7.1mOhm @ 18.9A, 10V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

器件图片

技术资料