650V DTMOS VI TO-220 110MOHM
沟道N 沟道
耐压650 V
连续漏极电流24 A
导通电阻110 mΩ
全部替代型号
查看完整报告技术参数
沟道N 沟道
耐压650 V
连续漏极电流24 A
导通电阻110 mΩ最大 · 12A
阈值电压4 V最大 · 1.02mA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Power Dissipation (Max) | 190W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Package | Tube |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| 其他 | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 300 V |
| Mfr | Toshiba Semiconductor and Storage |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4V @ 1.02mA |
器件图片
技术资料
该型号暂未收录资料。