The TK110U65Z is a Toshiba 400V - 900V MOSFETs product. N-ch MOSFET, 650 V, 0.11 Ω@10V, TOLL, DTMOSⅥ Switching Voltage Regulators｜ Find data sheet and product information from the product details page.
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| 电源 | |
|---|---|
| [Abs] Drain current (I D) | 24 A |
| [Abs] Drain-Source voltage (V DSS) | 650 V |
| [Abs] Gate-Source voltage (V GSS) | +/-30 V |
| [Abs] Power Dissipation (P D) | 190 W |
| [Elec] Gate threshold voltage (Max) (V th) | 4.0 V |
| [Elec] Gate threshold voltage (Min) (V th) | 3.0 V |
| 环境与封装 | |
| [Desc] RoHS Compatible Product(s) (#) | Available |
| 其他 | |
| [Desc] Application Scope | Switching Voltage Regulators |
| [Desc] Generation | DTMOSⅥ |
| [Desc] Internal Connection | Single |
| [Desc] Polarity | N-ch |
| [Elec] Drain-Source on-resistance (Max) (R DS(ON)) | 110 mΩ |
| [Elec] Input capacitance (Typ.) (C iss) | 2250 pF |
| [Elec] Reverse recovery charge (Typ.) (Q rr) | 3900 nC |
| [Elec] Reverse recovery time (Typ.) (t rr) | 300 ns |
| [Elec] Total gate charge (Typ.) (Q g) | 40 nC |
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数据手册数据手册 · 506.7 KB · 2026-09-23应用笔记应用笔记 · 3.5 MB · 2026-09-23应用笔记应用笔记 · 2.3 MB · 2026-09-23应用笔记应用笔记 · 2.1 MB · 2026-09-23应用笔记应用笔记 · 1.8 MB · 2026-09-23应用笔记应用笔记 · 1.6 MB · 2026-09-23应用笔记应用笔记 · 1.5 MB · 2026-09-23应用笔记应用笔记 · 1.3 MB · 2026-09-23应用笔记应用笔记 · 1.1 MB · 2026-09-23应用笔记应用笔记 · 1.1 MB · 2026-09-23应用笔记应用笔记 · 1.1 MB · 2026-09-23应用笔记应用笔记 · 575.0 KB · 2026-09-23
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