沟道N 沟道
耐压650 V
连续漏极电流34 A
导通电阻60 mΩ
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沟道N 沟道
耐压650 V
连续漏极电流34 A
导通电阻60 mΩ最大 · 22A
阈值电压4.8 V最大 · 700μA
| 电源 | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Power Dissipation (Max) | 119W (Tc) |
| 环境与封装 | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| 其他 | |
| Base Product Number | TP65H050 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Mfr | Transphorm |
| Packaging | Tube |
| Part Status | Active |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
| Series | - |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
技术资料
该型号暂未收录资料。