TP65H150G4LSGBE-TR

TP65H150G4LSGBE-TR

在产SCR - 模块

650V 150mΩ SuperGaN GaN FET in PQFN88

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技术参数

环境与封装
Moisture Sensitivity Level (MSL)3
Mounting TypeSurface Mount
Pkg. Dimensions (mm)8 x 8
Qualification LevelStandard
Temp. Range (°C)-55 to +150°C
其他
Blocking CapabilityUni-Directional Switch
Carrier TypeTape & Reel
Ciss (Typical) (pF)1160
Coss (Typical) (pF)28
Country of AssemblyCHINA
Country of Wafer FabricationJAPAN
FET TypeN-Channel
Id max @ 25°C (A)14.2
Pkg. TypePQFN88
Price (USD)$1.6218
Qg typ (nC)14
Qoss (nC)35
RDSON (max) (mΩ)180
RDSON (Typ) (mΩ)150
Ron * Qoss (FOM)5250
trr (Typical) (nS)32
Vds min (V)650
Vth typ (V)1.6
V(TR)DSS max (V)800

器件图片

技术资料