The TW123V65C is a Toshiba MOSFETs product. N-ch SiC MOSFET, 650 V, 0.123 Ω(typ.)@18 V, DFN 8×8, 3rd Gen. Switching regulators｜ Find data sheet and product information from the product details page.
全部替代型号
查看完整报告技术参数
| 电源 | |
|---|---|
| [Abs] Drain current (I D) | 18 A |
| [Abs] Drain-Source voltage (V DSS) | 650 V |
| [Abs] Gate-Source voltage (V GSS) | +25/-10 V |
| [Abs] Power Dissipation (P D) | 76 W |
| [Elec] Gate threshold voltage (Max) (V th) | 5.0 V |
| [Elec] Gate threshold voltage (Min) (V th) | 3.0 V |
| 环境与封装 | |
| [Desc] RoHS Compatible Product(s) (#) | Available |
| 其他 | |
| [Desc] Application Scope | Switching regulators |
| [Desc] Polarity | N-ch |
| [Elec] Drain-Source on-resistance (Typ.) (R DS(ON)) | 123 mΩ |
| [Elec] Input capacitance (Typ.) (C iss) | 600 pF |
| [Elec] Total gate charge (Typ.) (Q g) | 21 nC |