WAB300M12BM3

WAB300M12BM3

在产FET,MOSFET 阵列

SIC 2N-CH 1200V 382A MODULE

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技术参数

电源
Current - Continuous Drain (Id) @ 25°C382A (Tc)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Power - Max-
环境与封装
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 175°C (TJ)
PackageBulk
Package / CaseModule
Supplier Device PackageModule
其他
Base Product NumberWAB300
Configuration2 N-Channel (Half Bridge)
FET Feature-
Gate Charge (Qg) (Max) @ Vgs908nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds24500pF @ 1000V
MfrWolfspeed, Inc.
Product StatusActive
Rds On (Max) @ Id, Vgs5.2mOhm @ 300A, 15V
Series-
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id3.6V @ 92mA

器件图片

技术资料