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CAP TRIMMER 0.6-4.5PF 500V SMD

Our MOSFET has a wide lineup ranging from low withstand voltage to high withstand voltage. ■EETMOS Series ( Nch Single / V DSS 40 to 150V ) EETMOS series reduces Qg by optimizing the trench gate structure and layout, and has the industry's top level performance. EETMOS 2：Balanced Ron and Qg EETMOS 3：Low Ron、Low Qg EETMOS 4：Ultra Low Ron、Low Qg ■Hi-PotMOS Series（Nch Single / V DSS 250 to 600V ） Hi‐PotMOS series has the industry's top level of high destruction tolerance, and 100% screening inspection of di/dt and avalanche is carried out. Hi-PotMOS：High breakdown resistance, Avalanche rate, di/dt inspection (all parts) VX3：Automotive qualified, Avalanche rate, di/dt inspection (all parts), High breakdown resistance, High ESD Capability

Our MOSFET has a wide lineup ranging from low withstand voltage to high withstand voltage. ■EETMOS Series ( Nch Single / V DSS 40 to 150V ) EETMOS series reduces Qg by optimizing the trench gate structure and layout, and has the industry's top level performance. EETMOS 2：Balanced Ron and Qg EETMOS 3：Low Ron、Low Qg EETMOS 4：Ultra Low Ron、Low Qg ■Hi-PotMOS Series（Nch Single / V DSS 250 to 600V ） Hi‐PotMOS series has the industry's top level of high destruction tolerance, and 100% screening inspection of di/dt and avalanche is carried out. Hi-PotMOS：High breakdown resistance, Avalanche rate, di/dt inspection (all parts) VX3：Automotive qualified, Avalanche rate, di/dt inspection (all parts), High breakdown resistance, High ESD Capability

排针P2.0 1*2P DIP/180 HL1.5 上下各3.0 PA6T G/F 青铜

排针P2.0 1*4P DIP/180 双塑H4.5(1.5*2) 上2.0 下3.0 PA6T （1K/袋）

2.0*1.5 2*6P L9.2/13.2 PA4.0 PB4.3 PC2.8 双弯90°足1U