Cross references for Si2312BDS-T1-GE3-HXY

Original

HX

HXY MOSFETSi2312BDS-T1-GE3-HXY

导通电阻(RDS(on))35mΩ@4.5VQuantity1个N沟道漏源电压(Vdss)20V连续漏极电流(Id)3A