Microsemi CorporationUnited States

10502

ObsoleteTransistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 55SM

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Technical parameters

Power
Current - Collector (Ic) (Max)40A
Power - Max1458W
Voltage - Collector Emitter Breakdown (Max)65V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A, 5V
Frequency - Transition-
Gain8.5dB
Noise Figure (dB Typ @ f)-
Environment and package
Mounting TypeChassis Mount
Operating Temperature230°C(TJ)
PackageBulk
Package / Case55SM
Supplier Device Package55SM
Other
MfrMicrosemi Corporation
Product StatusObsolete
Series-
Transistor TypeNPN

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