Vishay General Semiconductor - Diodes DivisionUnited States
DIODE GEN PURP 600V 10A TO263AB
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View full reportTechnical parameters
Key specs
Reverse voltage600 V
Average rectified current10 A
Forward voltage1.2 VMax · 10 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 10 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -40°C~150°C |
| Package | Tube |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB (D²PAK) |
| Other | |
| Base Product Number | 10ETF06 |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Product Status | Obsolete |
| Reverse Recovery Time (trr) | 145 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
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