Analog Devices Inc.United States

175 DFN 8L ROHS

JFETs
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Technical parameters

Power
栅源击穿电压(V(BR)GSS)60V
栅源截止电压(VGS(off))4.5V@1nA
Other
FET类型2个N沟道
耗散功率(Pd)400mW

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