Rectron USATaiwan, China
DIODE GEN PURP 1.2KV 500MA R-1
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View full reportTechnical parameters
Key specs
Reverse voltage1.2 kV
Average rectified current500 mA
Forward voltage1.8 VMax · 500 mA
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 500mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 500 mA |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | R-1, Axial |
| Supplier Device Package | R-1 |
| Other | |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Rectron USA |
| Product Status | Active |
| Reverse Recovery Time (trr) | 300 ns |
| Series | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |