VishayUnited States

1N4448

DIODE GEN PURP 100V 300MA DO-35

Vishay 1N4448 is a silicon epitaxial planar fast switching diode with 100V reverse voltage and 150mA average forward current, suitable for extreme fast switches.Checked against the datasheet

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Technical parameters

Key specs

Reverse voltage100 V

Average rectified current150 mA150 mA (V_R=0)

Forward voltage1 VMax · Max 1 V (I_F=100mA)，Max 0.72 V (I_F=5mA)

TypeSwitching

Datasheet-verified parameters

18 items

Parameter	Value and test conditions	Source
Repetitive peak reverse voltage	100 V
Average forward current	150 mA (V_R=0)
Forward voltage	Max 1 V (I_F=100mA); Min 0.62 V, Max 0.72 V (I_F=5mA)
Type	Silicon Epitaxial Planar Diodes / Fast Switching Diodes
Package	Ammopack (1N4448-TAP), Tape and Reel (1N4448-TR)
Junction temperature	200 °C
Storage temperature range	-65...+200 °C
Peak forward surge current	2 A (t_p=1μs)
Repetitive peak forward current	500 mA
Forward current	300 mA
Power dissipation	500 mW (I=4 mm, T_L≤25°C); 440 mW (I=4 mm, T_L=45°C)
Reverse current	Max 25 nA (V_R=20 V); Max 5 μA (V_R=75 V)
Breakdown voltage	Min 100 V (I_R=100μA, t_p/T=0.01, t_p=0.3ms)
Diode capacitance	Max 4 pF (V_R=0, f=1MHz, V_HF=50mV)
Reverse recovery time	Max 8 ns (I_F=I_R=10mA, i_R=1mA); Max 4 ns (I_F=10mA, V_R=6V, i_R=0.1xI_R, R_L=100Ω)
Rectification efficiency	Min 45 % (V_HF=2V, f=100MHz)
Junction ambient thermal resistance	350 K/W (I=4 mm, T_L=constant)
RoHS	Not manufactured with ozone depleting substances

All parameters (7)ExpandCollapse

Power
Forward current	300 mA
Forward voltage	0.72 V (Max)
Power dissipation	500 mW
Repetitive peak reverse voltage	100 V
Environment and package
Junction temperature	200 °C
Storage temperature range	-65...+200 °C
Other
Reverse recovery time	8 ns (Max)

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Datasheet-verified content is extracted by AI from the manufacturer datasheet. Click a page number to view the original.