Microchip TechnologyUnited States
DIODE SCHOTTKY 50V 33MA UB
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Technical parameters
Key specs
Reverse voltage50 V
Average rectified current33 mA
Forward voltage1 VMax · 15 mA
TypeSchottkySmall Signal =< 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 33mA |
| Current - Reverse Leakage @ Vr | 200 nA @ 50 V |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 15 mA |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -65°C~150°C |
| Package | Bulk |
| Package / Case | 3-SMD, No Lead |
| Supplier Device Package | UB |
| Other | |
| Base Product Number | 1N5711 |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Diode Type | Schottky |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | Military, MIL-PRF-19500/444 |
| Speed | Small Signal =< 200mA (Io), Any Speed |
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