Microsemi CorporationUnited States
RF TRANS NPN 50V 2GHZ 55BT-1
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 500mA |
| Power - Max | 12W |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 100mA, 5V |
| Frequency - Transition | 2GHz |
| Gain | 8.5dB |
| Noise Figure (dB Typ @ f) | - |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | 200°C(TJ) |
| Package | Bulk |
| Package / Case | 55BT-1 |
| Supplier Device Package | 55BT-1 |
| Other | |
| Mfr | Microsemi Corporation |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | NPN |