General SemiconductorUnited States
TRANS NPN 125V 1A TO111
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View full reportTechnical parameters
Key specs
Collector-emitter voltage125 V
Collector current1 AMax
DC current gain20500mA
Power20 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| Current - Collector (Ic) (Max) | 1 A |
| Power - Max | 20 W |
| Voltage - Collector Emitter Breakdown (Max) | 125 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 500mA, 10V |
| Frequency - Transition | 2MHz |
| Environment and package | |
| Mounting Type | Stud Mount |
| Operating Temperature | - |
| Package | Bulk |
| Package / Case | TO-111-4, Stud |
| Supplier Device Package | TO-111 |
| Other | |
| Mfr | General Semiconductor |
| Product Status | Active |
| Series | - |
| Transistor Type | - |
| Vce Saturation (Max) @ Ib, Ic | 6V @ 100mA, 1A |