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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage45 V
Collector current1 AMax
DC current gain50150mA
Power1 WMax
Power
Current - Collector Cutoff (Max)50nA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)45 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 150mA, 10V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~200°C(TJ)
PackageBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic900mV @ 15mA, 150mA

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