Microchip TechnologyUnited States
DUAL SMALL-SIGNAL BJT
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 2nA |
| Current - Collector (Ic) (Max) | 30mA |
| Power - Max | 300mW |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C~200°C(TJ) |
| Package | Bulk |
| Package / Case | TO-99-6 Metal Can |
| Supplier Device Package | TO-99-6 |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 100µA, 1mA |
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