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Technical parameters

Key specs

TypePNP
Collector-emitter voltage40 V
Collector current1 AMax
DC current gain40500mA
Power1 WMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)1 A
Power - Max1 W
Voltage - Collector Emitter Breakdown (Max)40 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 1V
Frequency - Transition175MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~200°C(TJ)
PackageBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Other
MfrCentral Semiconductor Corp
Product StatusLast Time Buy
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A

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