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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage30 V
DC current gain451mA
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Voltage - Collector Emitter Breakdown (Max)30 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 1mA, 5V
Frequency - Transition-
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~150°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Other
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic-

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