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Technical parameters

Power
Current - Collector (Ic) (Max)50mA
Power - Max200mW
Voltage - Collector Emitter Breakdown (Max)12V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 3mA, 1V
Frequency - Transition2GHz
Gain15dB
Noise Figure (dB Typ @ f)4.5dB @ 200MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-65°C~200°C(TJ)
PackageBulk
Package / CaseTO-206AF, TO-72-4 Metal Can
Supplier Device PackageTO-72
Other
MfrCentral Semiconductor Corp
Product StatusActive
Series-
Transistor TypeNPN

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