Microchip TechnologyUnited States
POWER BJT
All alternatives
View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage100 V
Collector current5 AMax
DC current gain602A
Power1 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 100µA |
| Current - Collector (Ic) (Max) | 5 A |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2A, 2V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~200°C |
| Package | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 (TO-205AD) |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 500mA, 5A |
Documents
No documents are linked to this part yet.