Microchip TechnologyUnited States
POWER BJT
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View full reportTechnical parameters
Key specs
TypeNPN
Collector-emitter voltage300 V
Collector current2 AMax
DC current gain25500mA
Power1 WMax
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 200nA |
| Current - Collector (Ic) (Max) | 2 A |
| Power - Max | 1 W |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 500mA, 5V |
| Frequency - Transition | - |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C~200°C(TJ) |
| Package | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Supplier Device Package | TO-5AA |
| Other | |
| Mfr | Microchip Technology |
| Product Status | Active |
| Series | - |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 400mA, 2A |
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