LGE(鲁光)China
商品目录 场效应管(MOSFET)；类型 1个N沟道；漏源电压(Vdss) 60V；连续漏极电流(Id) 115mA；功率(Pd) 380mW；导通电阻(RDS(on)@Vgs,Id) 7.5Ω@10V,500mA；阈值电压(Vgs(th)@Id) 2V@250uA
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View full reportTechnical parameters
Key specs
Drain-source voltage60 V
Continuous drain current115 mA
On-resistance5 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 115mA |
| Other | |
| 导通电阻(RDS(on)) | 5Ω@10V |
| 耗散功率(Pd) | 150mW |