MSKSEMI(美森科)China
MOS管 类型:2个N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):300mA 功率(Pd):280mW 导通电阻(RDS(on)@Vgs,Id):1.8Ω@10V,300mA
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current300 mA
On-resistance1.8 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 300mA |
| Other | |
| 导通电阻(RDS(on)) | 1.8Ω@10V |
| 数量 | 2个N沟道 |