All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current292 mA
On-resistance3 ΩMax · 250mA
Gate threshold voltage2.5 VMax · 250μA
Power
Current - Continuous Drain (Id) @ 25°C292mA (Ta)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Power Dissipation (Max)500mW (Ta)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~150°C(TJ)
PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3
Other
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds35 pF @ 30 V
MfrDiodes Incorporated
Product StatusActive
Rds On (Max) @ Id, Vgs3Ohm @ 250mA, 10V
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Documents