SOT-23 (TO-236)

SOT-23 (TO-236)

VishayUnited States

2N7002K-T1-GE3

Transistors - FETs, MOSFETs - SingleSOT-23

N沟道,60V,0.3A,2Ω@10V

N-channel 60V single MOSFET in SOT-23 package, 0.3A continuous drain current, max 2Ω on-resistance, low threshold voltage, suitable for logic-level driving.Checked against the datasheet

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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current190 ~ 300 mA0.3 A (TA = 25 °C)，0.19 A (TA = 100 °C)
On-resistance2 ΩMax · 10V
Gate threshold voltage2 VTyp

Datasheet-verified parameters

16 items
ParameterValue and test conditionsSource
ChannelN-Channel
Drain-source voltage60 V
Continuous drain current0.3 A (TA = 25 °C), 0.19 A (TA = 100 °C)
On-resistance2 Ω max. at VGS = 10 V
Threshold voltage2 V (typ.)
PackageSOT-23
Operating junction and storage temperature range-55 to +150 °C
RoHSLead (Pb)-free
Halogen-freeHalogen-free
Gate-source voltage±20 V
Pulsed drain current0.8 A
Power dissipation0.35 W (TA = 25 °C), 0.14 W (TA = 100 °C)
Maximum junction-to-ambient350 °C/W
Gate charge0.4 nC (typ.)
ConfigurationSingle
ESD protection2000 V
All parameters (4)ExpandCollapse
Power
漏源电压(Vdss)60V
连续漏极电流(Id)300mA
Other
导通电阻(RDS(on))2Ω@10V,500mA
数量1个N沟道

Pinout and package

SOT-23 (TO-236)
SOT-23 (TO-236)
Package: SOT-23
PinNameFunctionSource
1Gate (G)
2Source (S)
3Drain (D)

Documents

DatasheetDatasheet · 214.9 KB · 2026-11-09DatasheetDatasheet · 217.4 KB · 2026-09-21DatasheetDatasheet · 210.6 KB · 2026-09-21DatasheetDatasheet · 41.0 KB · 2026-09-21
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