N-Channel MOSFET

2N7002K-T1

Transistors - FETs, MOSFETs - SingleSOT-23

MOSFET N-CH 60V 300MA 2OHM SOT-23

N-channel 60V MOSFET in SOT-23 package, 0.3A continuous drain current, 2Ω max on-resistance, 2V typ threshold voltage, with 2000V ESD protection.Checked against the datasheet

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Technical parameters

Key specs

ChannelN-channel

Drain-source voltage60 V

Continuous drain current190 ~ 300 mA0.3 A (TA = 25 °C)，0.19 A (TA = 100 °C)

Gate threshold voltage2 VTyp

Datasheet-verified parameters

18 items

Parameter	Value and test conditions	Source
Channel	N-Channel
Drain-source voltage	60 V
Continuous drain current	0.3 A (TA = 25 °C), 0.19 A (TA = 100 °C)
On-resistance	2 Ω max. at VGS = 10 V
Threshold voltage	2 V (typ.)
Package	SOT-23 (TO-236)
Operating junction and storage temperature range	-55 to +150 °C
RoHS	RoHS-compliant (2N7002K-T1-E3)
Halogen-free	Halogen-free (2N7002K-T1-GE3)
Gate-source voltage	±20 V
Pulsed drain current	0.8 A
Power dissipation	0.35 W (TA = 25 °C), 0.14 W (TA = 100 °C)
Maximum junction-to-ambient thermal resistance	350 °C/W
Gate charge	0.4 nC (typ.)
Input capacitance	25 pF
Switching speed	25 ns
ESD protection	2000 V
Configuration	Single

All parameters (7)ExpandCollapse

Power
Continuous drain current (TJ =150 °C) TA =25 °C	0.3 A
Drain-source voltage	60 V
Gate-threshold voltage	1 V (Min)
Environment and package
Operating junction and storage temperature range	-55 to +150 °C
Package	SOT-23
Other
Drain-source on-resistance b	2 Ω (Max)
Total gate charge	0.4 nC (Typ.)

Pinout and package

PackageSOT-23 (TO-236)

Pin	Name	Function	Source
1		Gate (G)
2		Source (S)
3		Drain (D)

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DatasheetDatasheet · 214.9 KB · 2026-10-29

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