Fairchild SemiconductorUnited States
MOSFET N-CH 60V 115MA SOT523F
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current115 mA
On-resistance7.5 ΩMax · 50mA
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 115mA (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Power Dissipation (Max) | 200mW (Ta) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C(TJ) |
| Package | Bulk |
| Package / Case | SC-89, SOT-490 |
| Supplier Device Package | SOT-523F |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Mfr | Fairchild Semiconductor |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 50mA, 5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |