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Technical parameters

Key specs

TypePNP
Collector-emitter voltage50 V
Collector current2 AMax
DC current gain70500mA
Power900 mWMax
Power
Current - Collector Cutoff (Max)1µA (ICBO)
Current - Collector (Ic) (Max)2 A
Power - Max900 mW
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 500mA, 2V
Frequency - Transition100MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature-55°C~150°C(TJ)
PackageBulk
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92 (TO-226)
Other
Base Product Number2SA1020
Mfronsemi
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 1A

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