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Technical parameters

Power
IC-最大集电极电流17A
VCBO-集基级击穿电压200V
VCEO-集射级击穿电压200V
AC and DC characteristics
fT-变换频率20MHZ
hFE-最小直流增益90
Environment and package
封装类型1MT200
最大工作温度150℃
Other
Pd-功率耗散200W
VCE(sat)-集射级饱和压降2.5V
引脚数量13

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