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Technical parameters

Key specs

TypePNP
Collector-emitter voltage200 V
Collector current17 AMax
DC current gain508A
Power200 WMax
Power
Current - Collector Cutoff (Max)100µA (ICBO)
Current - Collector (Ic) (Max)17 A
Power - Max200 W
Voltage - Collector Emitter Breakdown (Max)200 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 8A, 4V
Frequency - Transition20MHz
Environment and package
Mounting TypeThrough Hole
Operating Temperature150°C(TJ)
PackageBulk
Package / Case3-ESIP
Supplier Device PackageMT-200
Other
MfrSanken
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic2.5V @ 1A, 10A

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