All alternatives

View full report

1 alternatives on file. Sign in to view them.

Technical parameters

Key specs

TypePNP
Collector-emitter voltage50 V
Collector current150 mAMax
DC current gain1202mA
Power100 mWMax
Power
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)150 mA
Power - Max100 mW
Voltage - Collector Emitter Breakdown (Max)50 V
AC and DC characteristics
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 2mA, 6V
Frequency - Transition80MHz
Environment and package
Mounting TypeSurface Mount
Operating Temperature125°C(TJ)
PackageTape & Reel (TR)
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70
Other
MfrToshiba Semiconductor and Storage
Product StatusObsolete
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA

Documents