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Technical parameters

Power
IC-最大集电极电流4A
VCBO-集基级击穿电压140V
VEBO-射基级击穿电压7V
AC and DC characteristics
fT-变换频率10MHZ
hFE-最小直流增益100
Environment and package
封装类型1SOT223
Other
VCE(sat)-集射级饱和压降1.1V
引脚数量14

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